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A n-channel metal/ferroelectric/polycrystalline silicon/insulator/silicon structure field effect transistor (FET) with a Pb(Zr0.52Ti0.48)O3 ferroelectric layer has been proposed and demonstrated. The Pb(Zr0.52Ti0.48)O3 ferroelectric layer (200nm) was deposited by radio frequency magnetron sputtering. The counterclockwise drain current–gate voltage (Id-Vg) hysteresis loops of the ferroelectric FET demonstrate the memory effect of the device. The counterclockwise hysteresis loops are attributed to the ferroelectric polarization of the Pb(Zr0.52Ti0.48)O3 film. The memory window measured from the Id-Vg characteristics is about 2.6V as the Vg sweeps between −5 and +5V. The endurance characteristics of the device have been investigated.
Cai et al. (2007) studied this question.