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Naval Research Laboratory Electronics Science and Technology Division

h-index: 29
Total citations: 3,109
Total papers: 169

Homepage: https://www.nrl.navy.mil/Our-Work/Areas-of-Research/Electronics-Science-Technology/

Recent papers from Naval Research Laboratory Electronics Science and Technology Division

The Orthovanadate-Catalyzed Formation of a Thermally Inert and Low-Redox-Potential MelaninInternational Journal of Molecular Sciences · 2025
Classes of O–D centers in unintentionally and Fe-doped β-Ga2O3 annealed in a D2 ambientJournal of Applied Physics · 2023
Magnetotransport in Graphene/Pb0.24Sn0.76Te Heterostructures: Finding a Way to Avoid CatastropheACS Nano · 2022
Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARsIEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 2021
Atomic structural and electronic bandstructure calculations for boropheneMaterials Research Express · 2021
Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise ApplicationsElectronics · 2019
Mathematical Relationship of an Isotropic Point Source and the Spherically Distributed Antenna ArrayThe Applied Computational Electromagnetics Society Journal (ACES) · 2019
Physics of ferroelectric differential capacitance based upon free energy, and implications for use in electronic devicesJournal of Advanced Dielectrics · 2018
Work Function Variations in Twisted Graphene LayersScientific Reports · 2018
XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devicesJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2017
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substratesApplied Physics Letters · 2017
Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBEJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2017
AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaNJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2017
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistorsJournal of Applied Physics · 2016
Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architectureApplied Physics Letters · 2016
Homoepitaxial graphene tunnel barriers for spin transportAIP Advances · 2016
Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxyJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2016
Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxyJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2015
Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitorsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2015
Random antenna array phase and range limitations2015