Okmetic (Finland)

Recent papers from Okmetic (Finland)

1. Aethon: Toward a Memory-Native Post-Transformer Foundation Model2026
2. Aethon: Toward a Memory-Native Post-Transformer Foundation Model2026
3. A Detailed Examination of Polysilicon Resistivity Incorporating the Grain Size DistributionIEEE Transactions on Electron Devices · 2025
4. Modeling the Influence of Deposition Parameters on the Crystalline Degree in the Simulation of Polycrystalline Siliconphysica status solidi (b) · 2024
5. Polycrystalline silicon, a molecular dynamics study: II. Grains, grain boundaries and their structureModelling and Simulation in Materials Science and Engineering · 2024
6. Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modesModelling and Simulation in Materials Science and Engineering · 2024
7. Detection of Microcracks in Cz‐Si Wafer Manufacturing by Photoluminescence Imagingphysica status solidi (a) · 2024
8. Power-efficient thermo-optic phase shifters with cavity-SOI2024
9. Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator ApplicationsFrontiers in Materials · 2022
10. Machine Learning‐Based and Experimentally Validated Optimal Adhesive Fibril DesignsSmall · 2021
11. Geometric determination of direction of dislocations using synchrotron X-ray transmission topographyJournal of Synchrotron Radiation · 2020
12. MOVPE growth of GaN on patterned 6-inch Si waferJournal of Physics Communications · 2020
13. Polarization Responses of a Solitary and Optically Injected Vertical Cavity Spin LaserIEEE Journal of Quantum Electronics · 2019
14. Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOIIEEE Transactions on Electron Devices · 2018
15. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic IntegrationIEEE Electron Device Letters · 2018
16. High-Power 1180-nm GaInNAs DBR Laser DiodesIEEE Photonics Technology Letters · 2017
17. Chemically Stable Atomic-Layer-Deposited Al₂O₃ Films for ProcessabilityACS Omega · 2017
18. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic IntegrationIEEE Electron Device Letters · 2017
19. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strainSemiconductor Science and Technology · 2017
20. Spectral Characteristics of Narrow-Linewidth High-Power 1180 nm DBR Laser With Surface GratingsIEEE Photonics Technology Letters · 2016