LPE (Italy)

Recent papers from LPE (Italy)

1. Assessing innovative bulk (111) 3C-SiC epitaxial growth2024
2. Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiCCrystal Growth & Design · 2022
3. Review of Sublimation Growth of SiC Bulk Crystals2022
4. Opening through 200 mm Silicon Carbide Epitaxy2022
5. Effect of N and Al Doping on 3C-SiC Stacking Faults2022
6. Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropyPhysical Chemistry Chemical Physics · 2022
7. Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulationsCrystEngComm · 2021
8. Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field ApproachMaterials · 2019
9. Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architectureJournal of Applied Physics · 2018
10. Progress in SiC-4H Epitaxy with Horizontal Hot Wall ReactorsECS Journal of Solid State Science and Technology · 2013
11. Synthesis of (+)‐Dumetorine and Congeners by Using Flow Chemistry TechnologiesChemistry - A European Journal · 2011
12. 4H SiC Epitaxial Growth with Chlorine AdditionChemical Vapor Deposition · 2006