Dynamical chaos and level splitting under the channeling of the high energy positrons in 100 direction of the silicon crystal

Abstract The motion of charged particles in a crystal in the axial channeling regime can be both regular and chaotic. The chaos in quantum case manifests itself in the statistical properties of the energy levels set. These properties have been studied previously for the electrons channeling along 110 direction of the silicon crystal, in the case when the classical motion was completely chaotic, as well as for the ones channeling along 100 direction, when the classical motion can be both regular and chaotic for the same energy depending on the initial conditions. Here we study the positrons channeling in 100 direction. This case is of special interest due to the substantial tunneling probability between dynamically isolated regular motion domains in the phase space. The interaction of the energy levels via tunneling distinctly changes the level spacing statistics. All transverse motion energy levels as well as corresponding stationary wave functions are computed numerically for the 30 GeV positrons channeling in 100 direction of the silicon crystal. The values of the matrix elements for the tunnel transitions are extracted from these data. These results confirm the chaos assistance for the tunneling and the level splitting. These values will be used in the further researches of the quantum chaos manifestations in the channeling phenomenon.