Characterizing Analog Figure of Merits of 5 nm Technology Node FinFETs from 10 K to 400 K

Cryogenic CMOS circuits are inevitable for deep space and Quantum Computing (QCs) applications. Analog circuits such as amplifiers, comparators, ADC, and DAC are essential components of the CMOS-based cryogenic control circuits. The performance of these circuits highly depends on analog figures of merits (FoMs) of the intrinsic transistors. Thus, for the first time, here, we present the characterization of the analog FoMs of 5 nm technology FinFETs from 400 K down to 10 K. We also compare the characterized FoMs with previous generation CMOS technology-based transistors at both room and cryogenic temperatures.