TMD material investigation for a low hysteresis vdW NCFET logic transistor

Abstract Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for low-power applications. Research in device physics can address this problem by selection of proper materials satisfying our requirements. Recently, 2D transition metal di-chalcogenide (TMD) materials are gaining interest because they help alleviate short-channel effects and DIBL problems. The TMD materials are composed by covalently bonded weak van der Waals (vdW) interaction and can be realized as hetero structures with 2D ferro-electric material CuInP 2 S 6 at the gate stack. This paper demonstrates a vdW negative capacitance field effect transistor (NCFET) structure in TCAD and the design was validated for voltage-current Characteristics. Parametric analysis shows MoS 2 with phenomenal on/off ratio, narrow hysteresis than the counterparts. Simulation shows that MoS 2 vdW NCFET has a high transconductance of 2.36 µ S µ m −1 . A steep slope of 28.54 mV dec −1 is seen in MoS 2 vdW NCFET which promises the performance of logic applications at a reduced supply voltage.