Ternary-based InAs/InAs1-xSbx Strained-Layer Superlattice (SLS)material with type-II band alignment belongs to the 6.1 A family with reasonably small lattice mismatch with GaSb substrate for epitaxial growth. InAs/InAs1-xSbx SLS have been proven to have more advantages such as longer carrier lifetime, better control on growth and manufacturability, and being considered as an alternative material system for infrared photodetectors. In this article a quantum mechanical based modelling on electronic band structure of InAs/InAs1-xSbx is presented. A modified sp3s* empirical tight binding method along with implementing a virtual crystal approximation with a bowing of the s-on-site tight-binding energy, were incorporated. In this approach, a theoretical explanation of atomic segregation in superlattices is suggested and used in calculations. The simulations show good agreement with experimentally measured band gap of InAs/InAs1-xSbx superlattices.
Dehzangi et al. (Thu,) studied this question.