With the development of the Internet of Things (IoT), data centers and edge computing, low-power semiconductor technology has received increasing attention. Traditional CMOS is limited by static and dynamic power consumption, subthreshold swing (SS), and voltage scaling bottlenecks. This paper reviews the research progress of fin field-effect transistors (FinFET), tunnel field-effect transistors (TFET), negative capacitance field-effect transistors (NCFET), two-dimensional materials, and III-V semiconductors in the field of low power consumption. New devices such as NC-FinFET and TFET break through the Boltzmann limit and show the potential to reduce power consumption and enhance energy efficiency. By combining material innovation and structural optimization, this study explores their application prospects and challenges in future low power computing systems.
Kehui Song (Thu,) studied this question.