Capacitively coupled GaAs p-i-n/substrate photodetector with ohmic contacts on lightly doped n-GaAs for hard X-ray imaging

Key Points

• Enhanced imaging capabilities occur due to the utilization of capacitively coupled gallium arsenide photodetectors.
• Key improvements include the ability to effectively detect hard x-rays, achieving unprecedented sensitivity levels.
• Fabrication method involved developing ohmic contacts on lightly doped n-gallium arsenide to optimize device performance.
• Potential applications range from medical imaging to security screening, suggesting a broad impact on technology.