It has been experimentally found that the return to the active region of the part of its own intense stimulated picosecond emission reflected from the end face of the AlGaAs–GaAs–AlGaAs heterostructure leads to a significant reduction in the characteristic relaxation time of the narrowly directed portion of the generated emission. The reduction occurs due to the controlled reduction, up to the disappearance, of the contribution to the characteristic time created by the absorption of emission by free charge carriers.
Bronevoi et al. (Wed,) studied this question.