The image data obtained from solid-state, two-dimensional (2D) broadband photodetectors enable enhanced object identification owing to the wide range of information residing beyond human vision capabilities. However, the widespread use of these photodetector devices is limited by narrow photoresponse ranges and low response speeds. The obtained 2D InSbSe3 photodetector devices exhibit comprehensively excellent optoelectronic properties with a high on/off ratio of 105, a high photoresponsivity of 5.14 A/W, and an ultrashort photoresponse time of 6 ms under laser illumination at a wavelength of 520 nm with an applied bias voltage of 0.2 V. These metrics represent a greater performance than those obtained by most previously reported photodetector devices composed of other 2D ternary materials. Furthermore, the InSbSe3-based photodetector devices demonstrate a favorable broadband photoresponse, with good performance obtained at wavelengths ranging from ultraviolet (265 nm) to near-infrared (940 nm). Finally, the developed photodetector devices facilitated optical imaging conducted at wavelengths of 375, 520, and 785 nm. Accordingly, the proposed 2D InSbSe3 nanosheet materials exhibit a substantial potential for the development of low-power, high-sensitivity multispectral imaging systems useful in a wide range of applications such as machine vision, environmental monitoring, and medical diagnosis.
Fang et al. (Mon,) studied this question.