Key points are not available for this paper at this time.
A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.
Nakaharai et al. (Tue,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: