Bandgap engineering and edge-state delocalization in Si-substituted zigzag graphene nanoribbons for multilayer p–n junction solar cells: a theoretical investigation
Key Points
This research aims to explore the effects of bandgap engineering and edge-state delocalization on zigzag graphene nanoribbon solar cells.
Theoretical modeling of zigzag graphene nanoribbons (ZGNR) for p-n junction structures.
Analysis of edge-state delocalization effects on photocurrent generation.
Investigation of various substitution levels of silicon (Si) in ZGNR.
Identified optimal bandgap configurations for enhanced photocurrent.
Demonstrated significant influence of edge-state delocalization on device efficiency.
Abstract
The ZGNR p–n junction solar cell device structure and its photocurrent.
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Bandgap engineering and edge-state delocalization in Si-substituted zigzag graphene nanoribbons for multilayer p–n junction solar cells: a theoretical investigation | Synapse