Molybdenum disulfide (MoS2) is a compelling candidate for visible-light detection due to its strong optical absorption and tunable bandgap, yet the development of high-performance MoS2 photodetectors remains limited by challenges in scalable integration, low-voltage operation, and efficient photoresponse. Here, we report an ion-gel-assisted transfer strategy that enables the fabrication of large-area MoS2/ion gel films that are suitable for low-power phototransistor applications. The transferred MoS2/ion gel stack is laminated onto an indium-tin-zinc-oxide (ITZO) layer on a glass substrate to fabricate a MoS2/ITZO heterojunction phototransistor, with the ion gel serving as an ultrathin, high-capacitance gate dielectric. The resulting phototransistor exhibits a field-effect mobility of 4.12 cm2/Vs, an on/off current ratio of 4.9 × 105, and a subthreshold swing of 0.17 V/dec. Under 635, 520, and 405 nm illumination with a power density of 4.5 mW/cm2, it achieves responsivities of 0.58, 1.82, and 5.56 A W−1 and detectivities of 5.90 × 109, 1.86 × 1010, and 5.68 × 1010 Jones, respectively. These findings demonstrate that the ion-gel-assisted transfer process offers a robust route to high-performance, low-voltage photodetection and provides a promising platform for next-generation optoelectronic technologies.
Lee et al. (Thu,) studied this question.