Temperature Dependence of the Electrical Properties of Bismuth-Antimony Alloys

The electrical resistivity and Hall effect R of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4. 2^ to 300^. Log ({₃₀₀}) vs 1T curves suggest thermal activation of carriers in the concentration range from 5% to 40% Sb in the temperature range from 25^ to 100^; approximate activation energies have been inferred from their slopes. The activation energy appears to have a maximum at a concentration near 12%. Some anomalies have been observed in the behavior of and R on both sides of this concentration at low temperatures. Lattice parameters for these alloys have also been measured for the entire range of solid solubility. Both a maximum and minimum in the c-axis lattice parameter vs concentration occur near the concentration at which anomalies appear in transport properties. These phenomena are discussed in terms of a simple band model proposed by Blount and Cohen.