Key points are not available for this paper at this time.
Internal photoemission characteristics from the Al–SiO2 interface are markedly affected by a 400 °C 20 min forming gas (90% N2 and 10% H2) anneal. The barrier height is raised by about 0.25 eV and the electric field dependence of the photocurrent is increased.
Solomon et al. (Tue,) studied this question.