ABSTRACT In this study, Mo films with thicknesses ranging from 70 to 650 nm were deposited onto InSe thin films under vacuum to investigate their influence on the structural, optical, electrical, and photoelectrical properties. Mo coating induced a shift in the optical band gap from 1.41 to 1.69 eV and introduced negative absorption in the 1.15–1.85 eV range, enabling potential light signal amplification for optoelectronic applications. Electrical analysis revealed that Mo nanosheets reduced the resistivity of pristine InSe by 35.8% and increased the photocurrent by 63.9%. Temperature‐dependent measurements (100–300 K) indicated deeper activation energies and extended hopping ranges in Mo‐coated films. Enhanced supralinear recombination at the surface further contributed to improved photoresponse. These combined effects, represented by tunable optical properties, reduced resistivity, increased photocurrent, and enhanced recombination, demonstrate the promise of Mo‐coated InSe thin films for advanced optoelectronic technologies.
Khusayfan et al. (Fri,) studied this question.