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A directed-assembly method on the basis of graphene oxide (GO) pieces is developed, which allowed us to mass-produce a uniform array of graphene-based ambipolar memory devices using only conventional microfabrication facilities. Significantly, we successfully demonstrated that this device can be operated as both conventional conductivity-switching memory and new type-switching memory by adjusting the charge density on the nanoparticles.
Myung et al. (Fri,) studied this question.