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We discuss an improved mid-wave infrared diode laser structure based on InAs-Ga1−xInxSb- InAs-Ga1−xAlxSb Type-II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, and excellent electrical and optical confinement.
Meyer et al. (Mon,) studied this question.