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Single crystals of germanium and silicon have been plastically deformed at elevated temperatures. Germanium becomes ductile above 500^, and silicon requires temperature above 900^. At temperatures below 600^, germanium exhibits an induction period at constant load. Deformed germanium, originally n-type, remains n-type. The resistivity is increased by deforming, and the lifetime of photo-injected carriers is drastically reduced.
C. J. Gallagher (1952) studied this question.