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Lasing characteristics were measured for several double-heterostructure (DH) wafers with lower (10^16/cm3) and higher (p 10^19/cm3) carrier concentrations to those that were reported previously by Pinkas et al. The new data give additional support to the assumption that the major lasing-loss mechanism is the free carrier absorption.
Pinkas et al. (1973) studied this question.
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