Key points are not available for this paper at this time.
A simple procedure for evaluating the performance of any positive electron resist is presented. SEM examination of the developed resist edge profile after electron-beam exposure and development gives simultaneous information on resist sensitivity and resolution for a given resist thickness. This method gives a unique exposure charge-density point for optimum resolution for a given resist system independent of developer strength.
M. Hatzakis (1975) studied this question.