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The semiconductor industry is being radically impacted by the placing of greater emphasis on the development of hetero-devices and systems that will act as essential drivers for a wide spectrum of technological applications. The introduction of new materials and their integration with currently used materials are projected to replace integrated circuitry (IC) design and device scaling as the key enablers to the realization of improved device performance and larger density gains. Yet material selection has been constrained by existing fabrication process technology. To date, fabrication processes have dictated material selection by limiting chemical sources or precursors to those that match existing process tools associated with chemically based vapor phase processes and their variants, which in turn limits material compositions in ICs. The processing and integration of new materials compositions and structures will require the introduction of new deposition and etching processes, and manufacturing worthy tool designs and associated protocols that provide new methods for atomic-level control. To this end, a novel manufacturing paradigm is presented comprising a method and system for real-time, closed-loop monitoring and control of synthesis, supply, and consumption of precursors in process intensification techniques including chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer etching (ALE), and other IC manufacturing processes. This intelligent automated manufacturing approach is consistent with a central component of the semiconductor industry’s recent adoption of Industry 4.0., including vertical integration of IC manufacturing through robotization, artificial intelligence, and cloud computing. Furthermore, the approach eliminates several redundant steps in the synthesis, handling, and disposal of source precursors and their byproducts for CVD, ALD, ALE and other chemically based manufacturing processes, and thus ultimately lowers the manufacturing cost for both conventional and new IC materials. Further, by eliminating the issues associated with precursor thermal, chemical, and pyrophoric instabilities, this new paradigm enables the deposition of a myriad of new thin-film materials and compositions for IC applications that are practically unattainable with existing precursors. Preliminary and planned demonstration examples for the generation and deposition of highly toxic and unstable source precursors are provided.
Arkles et al. (Mon,) studied this question.