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Transition metal ion was added to CMP (chemical-mechanical polishing) slurry without abrasive particle to solve the problem of CMP. MRR (material removal rate) value of SiC substrate processed using non-abrasive slurry was comparable to MRR values of SiC substrates using abrasive slurries. The scratch formation was successfully suppressed in SiC substrate polished with using non-abrasive slurry and no residual particle resulting from agglomeration of abrasive particles could suppress scratches and forms a good quality of SiC substrate surface. Uniform and high-quality SiC substrates could be prepared through the non-abrasive CMP process.
Lee et al. (Thu,) studied this question.