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A Semi-cellular Z-type Gate SOI-LDMOS (ZG LDMOS) with Improved Gate Control Capability is proposed, and its physical mechanism is studied by SENTAURUS. It is a semi-cellular structure similar to "Z" consisting of a Trench Gate (TG) and a Planar Gate (PG). At the on-state, the inversion layer of the conductive channel is not only formed at the top of the P-well region, but also formed along the side wall of the Z Gate, expanding the width of the channel, improving the electron injection ability and reducing the specific on-resistance (Ron,sp). In addition, the Z Gate can also form a uniform current distribution from the drift region to the bottom, which is helpful to reduce the Ron,sp, improve the transconductance and enhance the current control ability. The 3D simulation results show that BV, Ron,sp are 187.3 V and 4.45 mΩ∙cm2, respectively. The FOM reached 7.91 MW/cm2. Compared with the conventional LDMOS, the FOM value of ZG LDMOS increased by 58.8%, which breaks through the silicon limit of RESURF.
Chen et al. (2024) studied this question.