Exploring the optimal combination of Ru/Ta bilayer mask stacks and illumination source shapes to mitigate Mask 3D effects at High-NA Extreme Ultraviolet Lithography

The imaging performance of extreme ultraviolet (EUV) lithography is determined by the optical properties and thickness of the photomask absorber material and the illumination source shape. Optimizing the trade-offs between imaging metrics, such as normalized image log slope, telecentricity error, and best focus variation through pitch (collectively known as mask-3-dimensional (M3D) effects), is crucial to improve the throughput of the EUV lithography process. This study aims to optimize Ru/Ta bilayer photomask absorber stacks and illumination source shapes to mitigate M3D effects using mask diffraction analysis. It intends to raise questions about the conventional absorber reflectivity or induced phase shift-based approach.