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Abstract The Cu‐based halide semiconductor CuGaI 4 was prepared by a high‐temperature melting method. Optoelectronic characterization and density functional theory calculations of CuGaI 4 reveal a direct bandgap of 2.9 eV. The corresponding UV photodetector (PD) based on CuGaI 4 demonstrates excellent UV response and rapid response time. In addition, a flexible PD based on CuGaI 4 is prepared, which also displays excellent photoresponse characteristics and mechanical stability. This work provides a systematic study of this novel Cu‐based halide semiconductor and demonstrates the great potential of CuGaI 4 for future UV optoelectronic devices.
Chen et al. (Mon,) studied this question.