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Abstract Two‐dimensional (2D) materials have attracted extensive attention in the field of photodetection thanks to their unique physical properties. Among them, the PdSe 2 nanoflake shows great potential. However, the performance of the PdSe 2 ‐based photodetector with a hetero‐type heterojunction remains poor due to the severe tunneling‐assisted interfacial recombination of photogenerated electron‐hole pairs in the thin bilateral‐depletion heterojunctions. In this work, a novel photodetector with a α‐In 2 Se 3 /PdSe 2 homo‐type heterojunction for both high‐performance and broadband detection from visible to short‐wave infrared is constructed. The high‐performance of the photoresponsivity of 4.64 × 10 3 A·W −1 , the external quantum efficiency of 1.08 × 10 6 %, and the specific detectivity of 1.55 × 10 14 Jones at 532 nm is the result of the homo‐type unilateral‐depletion junction which can promote the effective separation of photogenerated electron‐hole pairs compared to the hetero‐type. Also, adjusting the α‐In 2 Se 3 ferroelectric polarization state further optimizes the unilateral depletion region. In addition, the photodetector can work in a self‐powered mode. This study suggests that the PdSe 2 ‐based homo‐type device has great application potential in the field of 2D optoelectronics.
Mu et al. (Thu,) studied this question.