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Abstract For the first time, a physics‐based modelling of a nanoscale Ni/Mo/MoO 3 /Ni memristor is presented in this letter by inserting a ‘Mo:Capping layer’ between the top electrode (Ni) and the insulating layer (MoO 3 ). The proposed memristor has stable hysteresis I – V characteristics as well as a significant reduction in ‘Forming voltage’ ( V FORM ) to 0.75 V. The simulated resistive switching responses using the COMSOL Multiphysics package demonstrate consistently low values of coefficient of variability ( C V ) with 14.31% and 14.85% for the SET and RESET modules, respectively, during cycle‐to‐cycle variations along with a low compliance current ( I CC ) of 193 µA. In addition to observing synaptic plasticity behaviour, it also examines how ramp‐rates impact ‘Potentiation’ and ‘Depression’ as memristor conductance ( G ) is closely related to synaptic weights.
Praveen et al. (Wed,) studied this question.
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