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Abstract The integration of complex oxides with a wide range of functionalities on conventional semiconductor platforms is highly demanded for functional applications. Despite continuous efforts to integrate complex oxides on Si, it is still challenging to harvest epitaxial layers using standard deposition processes. Here, a novel method is demonstrated to create high‐quality complex heterostructures on Si integrated with SrTiO 3 membranes as a universal platform. The STO membrane successfully bridges a broad spectrum of complex heterostructures such as SrNbO 3 , SrVO 3 , TiO 2 , and dichalcogenide 2D superconducting FeSe toward semiconducting wafers (Si). Through electronic structures measured by angle‐resolved photoemission spectroscopy, the high quality and functionality of the heterostructures are verified. This study demonstrated a new pathway toward realizing electronic devices with multifunctional physical properties incorporated into Si.
Li et al. (Fri,) studied this question.