Perovskite light‐emitting diodes (PeLEDs) have considerable potential for high performance, but their practical applications are limited by surface defects and mismatches in energy levels, which require advanced interface materials to be resolved. In this study, an interfacial modification strategy using Ti 3 C 2 T x ‐based heterostructures was proposed. Graphene oxide (GO) and molybdenum disulfide (MoS 2 ) were respectively composited with Ti 3 C 2 T x to construct Ti 3 C 2 T x ‐GO and Ti 3 C 2 T x ‐MoS 2 heterostructures, which were subsequently introduced as interlayers between the hole transport layer (HTL) and the emissive layer (EML) of PeLEDs. Moreover, the optoelectronic performance of the resulting PeLEDs was systematically investigated. A maximum luminance of 7314 cd/m 2 and a maximum current efficiency of 7.09 cd/A were achieved by PeLEDs when integrated with the Ti 3 C 2 T x ‐GO heterostructure. By contrast, those incorporating the Ti 3 C 2 T x ‐MoS 2 heterostructure exhibited a maximum luminance of 7888 cd/m 2 and a maximum current efficiency of 7.79 cd/A. This improvement could be attributed to the introduction of Ti 3 C 2 T x ‐based heterostructures, which served to both passivate surface defects in the perovskite EML and promotes charge transport. Overall, this study confirms the unique advantages of MXene‐based materials in the regulation of perovskite optoelectronic devices, providing a theoretical and technical basis for their wider use in photovoltaics and optoelectronics.
Chen et al. (Sun,) studied this question.