Recent Advances in Diamond-Capped GaN HEMTs for RF Application

Self-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond’s exceptional thermal conductivity (>2000 W/m·K) has emerged as a highly promising near-junction cooling solution. However, its integration with GaN HEMTs faces challenges including lattice/thermal mismatch, high thermal boundary resistance (TBR), and process compatibility. This review summarizes recent progress in high-thermal-conductivity diamond film growth, TBR optimization, thermal simulations, and the integrated process with GaN devices. These technological breakthroughs enable diamond-capped GaN HEMTs with an excellent comprehensive performance. Continued advances in these fields will be critical for fully releasing the capabilities of diamond capping technology for GaN HEMTs in high-frequency and high-power applications.