Semiconductor materials characterized by wide-bandgaps are well-suitable for measuring and detecting high-energy particles, such as x rays. According to the insulating properties of metal oxides and the sensing capabilities of two-dimensional nanomaterials, magnesium oxide (MgO) becomes a promising sensing material. To change the sensing behavior of composites, metal nanoparticles used to capitalize on their synergistic effects and change in reactions. According to this, magnesium oxide/gold (MgO/Au) nanocomposite was synthesized using facile and straightforward methods, namely laser ablation in liquid and magnetic stirring. In the study of electric response to x ray, it was observed that, compared to the energy change in photons, the MgO/Au nanocomposite shows higher sensitivity to intensity changes in x radiation. In contrast, MgO nanosheets demonstrate sensitivity to energy and intensity changes in radiation. With precise ammeter and appropriate analysis, these materials, when placed in the same device, have the potential to measure the energy and intensity of x rays. It is well established that semiconductors such as MgO with wide-energy-bandgaps exceeding 5 eV can demonstrate resistances in the megaohm range in prepared samples for analysis. Due to this elevated resistance, the electric current flowing through the biased material typically falls within the hundreds of picoamperes (pA). Such low current levels pose significant challenges for measurement using standard and even advanced ammeters, as they are highly susceptible to interference from noise sources. To mitigate this challenge, we have developed and evaluated a circuit designed to supply the necessary bias voltage and accurately measure extremely low electrical currents, specifically at the 10 pA level.
Raki et al. (Sun,) studied this question.