High-Performance Electrode-Controlled MoTe2 Memristor for Dual-Mode Synaptic Plasticity in Neuromorphic Systems

Key Points

• To enhance synaptic plasticity in neuromorphic systems using a MoTe₂-based memristor with a new electrode design.
• Developed a MoTe₂ memristor with bottom-embedded electrode architecture
• Analyzed the effects of electrode design on synaptic plasticity
• Evaluated performance in neuromorphic systems
• Mitigated persistent Fermi-level pinning effects
• Enhanced the dual-mode synaptic plasticity
• Demonstrated improved performance over conventional 2D material devices