The paper presents a comparison study results on the heterostructure between TiS3 and Porous Silicon with pure Porous Silicon optoelectronic properties for photonics applications. To do this, titanium trisulfide, Porous Silicon and a heterostructure between them were synthesized and investigated. The TiS3/P–Si heterostructure-based photodetector demonstrated a significant performance enhancement over the pure P–Si device. Key results include an 8 to 10 fold increase in photoresponsivity (reaching up to ~190 A/W at 2 V bias, wavelength of 632.8 nm and 0.3 mW/cm2 light power density), quantum efficiency (exceeding 37%), and detectivity (up to 2.26 × 1010 Jones). Furthermore, the heterostructure exhibited a much faster response time of 0.015 s compared to 0.169 s for the pure P–Si device. The results demonstrate the relevance of using heterostructures for the development of new generation photodetectors.
Rymzhina et al. (Mon,) studied this question.