Lattice engineering via large-radius cation doping: A novel strategy for CMAS-resistant high-entropy (Nd0.2Y0.2Er0.2Yb0.2Lu0.2)2SiO5

Key Points

• CMAS resistance improves significantly in the high-entropy silicate (Nd0.2Y0.2Er0.2Yb0.2Lu0.2)2SiO5.
• Lattice engineering through large-radius cation doping enhances structural integrity against environmental effects.
• The study utilizes advanced characterization techniques to analyze the doped silicate material properties.
• Findings may enable improved performance in high-temperature applications, further advancing material science.