On the knowledge of depth effect on secondary ion mass spectrometry profiling of deuterium-implanted fusion matrices

This paper evaluates the influence of light ion penetration, particularly deuterium, in the characterization of fusion materials by secondary ion mass spectrometry (SIMS). Towards this end, deuterium ions have been implanted into tungsten and copper alloys matrices at varying energies (500 keV, 1 MeV, and 1.5 MeV) and at the same fluence (1 × 10 16 at/cm 2 ). Silicon control testers were also utilized for comparative analysis of SIMS. Stopping and Range of Ions in Matter (SRIM) simulation software calculated as an approximation the D distribution achieved at the energies selected. The findings in the produced samples provide deuterium profiles similar to those obtained with the computational code. However, discrepancies in terms of the projected range, the width of the implantation peak, and the relative intensity were observed at deeper implantation distances compared to other irradiations. To elucidate the likely origin of these features, electron microscopy and diffraction techniques were employed. To the best of our knowledge, the present research novelty explores the deuterium SIMS signal variation in these materials as a function of depth and evaluates the influence of matrix features, roughness and/or equipment sensitivity. • Deuterium is implanted at varying energies in tungsten and copper alloys. • Secondary ion mass spectrometry is a key tool for determining light ions in fusion. • SIMS replicates the predicted D projected range from the SRIM code. • Assess profiles asymmetry by matrix features, roughness and instrument sensitivity.