Tellurium/pyramid-silicon heterostructure arrays for broadband photoelectric detection and imaging device

Key Points

• The central aim is to develop a high-performance broadband photoelectric detector using tellurium/pyramid-silicon heterostructures.
• Deposited patterned tellurium films onto pyramid silicon using magnetron sputtering.
• Constructed large-area tellurium/pyramid-silicon heterostructure arrays.
• Added an aluminum oxide insulating layer and gold electrodes to complete the device.
• The heterostructure exhibited a rectification ratio of 4.1×10^2.
• Demonstrated broad spectral response from 520 nm to 1064 nm.
• Achieved a high responsivity of 6.95 mA/W and a specific detectivity of 1.36×10^9 Jones.
• Displayed fast response times of 129 μs (rise) and 237 μs (fall) for signal processing.