Enhancement of Electrochemical Properties of BiVO 4 : Role of Oxygen Vacancies Induced by Ag Ion Implantations

Key Points

• The aim is to explore how Ag ion implantation affects the electrochemical properties of BiVO4 thin films.
• Experimental investigation of Ag ion implantation
• Analysis of resulting oxygen vacancies
• Measurement of electrochemical properties of BiVO4 thin films
• Significant improvement in the electrochemical properties of BiVO4 was observed.
• Oxygen vacancies induced by Ag ion implantation contributed to these enhancements.