Exploration of Ferroelectric Behavior of Turmeric and Its Integration as a Gate Dielectric in Organic Field-Effect Transistors

Key Points

• This research investigates the ferroelectric properties of turmeric and its potential use as a gate dielectric in electronic devices.
• Characterization of turmeric's ferroelectric and piezoelectric properties.
• Evaluation of its performance in organic field-effect transistors.
• Comparison with traditional dielectric materials.
• Turmeric exhibits significant ferroelectric properties suitable for electronics.
• The integration shows promise for enhancing device performance.
• Sustainable characteristics highlight advantages over conventional materials.