Key points are not available for this paper at this time.
Abstract Efficient current‐induced switching of perpendicular magnetization is an essential task in spintronics for realizing high‐performance information processing and for storage device application. However, the spin‐orbit torque (SOT) by injection of in‐plane polarized spins cannot deterministically switch the magnetization of ferromagnetic thin films with perpendicular magnetic anisotropy (PMA) without an additionally applied in‐plane external magnetic field to break the symmetry of the PMA. Considering the difficulties of applying the magnetic field to the localized area only within a device structure, it is essential to contrive a facile field‐free SOT switching mechanism. Here, deterministic field‐free SOT switching of perpendicular magnetization is achieved in amorphous and ferrimagnetic Gd/Co multilayers accompanied by a tilted magnetic anisotropy axis. This tilted anisotropy originates from the combined contributions of many internal anisotropies in different orientations from the multilayers and is shown to be controllable. It is expected that the introduction of controlled tilted anisotropy into Gd/Co multilayers over the entire film surface in the present study can be extended to the development of wafer‐scale technologies for the spintronics memory and logic devices.
Kim et al. (Tue,) studied this question.