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We present experimental data on saturation of the strong-coupling regime in semiconductor microcavities based on intensity-dependent photoluminescence measurements. The saturation can be understood in terms of electron-hole pair screening of the quantum-well exciton. The very low saturation intensity Iₒ₀ₓ^incident=100 W cm^-2 leads to a saturation density Nₒ₀ₓ^100{0ex{0ex}K}=4. 310^10 cm^-2 in good agreement with a theoretical model. These results are important for applications such as lasers in the strong-coupling regime and nonlinear devices.
Houdré et al. (Fri,) studied this question.