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In this paper, we describe a fully-functional 1 Gb standalone spin-transfer torque magnetoresistive random access memory (STT-MRAM) integrated on 28 nm CMOS and based on perpendicular magnetic tunnel junctions (pMTJ's). Electrical short flows were used to guide the pMTJ stack development. We demonstrate reliable operation of the 1 Gb devices, including well-behaved STT write distributions, an endurance cycling lifetime up to at least 2×10 11 cycles, and data retention of 10 years at 85°C. Testing results at -35°C to 110°C for the 1 Gb devices indicate good capability for industrial temperature range applications.
Aggarwal et al. (Sun,) studied this question.