In-Situ Studies of Interfacial Bonding of High-k Dielectrics for CMOS Beyond 22nm

Using in-situ synthesis and surface analysis, we examine the reactions of selected high-k dielectrics with candidate alternate channel materials, Ge and InGaAs, for CMOS applications beyond 22 nm. The study of the reaction of Hf-germanate on Ge and alumina on InGaAs are presented. The in-situ methods described enables the study of the bond formation at these interfaces, and enables a better understanding of the reaction mechanisms.