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In this letter, gallium doped HfO2 (Ga: HfO ₂) ferroelectric capacitors were fabricated and characterized. It is demonstrated that the W/Ga: HfO2/W capacitors under 650 °C rapid thermal annealing achieved a comprehensively good ferroelectricity, including a large remnant polarization (2P ₑ) of 32. 0~ C /cm2 and a small coercive electric field (E ₂) of 0. 9 MV/cm. Moreover, the devices exhibit robust breakdown reliability including high breakdown electric field (E ₁₃) (>4. 5 MV/cm), and large breakdown voltage (>2. 7 V) for 10-year time-dependent dielectric breakdown (TDDB) lifetime. Moreover, the robust endurance (10^{10}) was achieved in W/Ga: HfO2/W capacitors under 1 MHz loading. Such improvements were mainly attributed to the decreased E ₂/E ₁₃ ratio from Ga effectively doping, which lowered the probability of breakdown during cycling. This work provides the perspective to optimize the reliability HfO2-based ferroelectric devices through doping engineering.
Huang et al. (Fri,) studied this question.