The ferroelectric field-effect transistor (FeFET) is considered a highly promising candidate for high-performance artificial synapses due to its non-destructive readout capability, low power consumption, and gate-voltage-controlled non-volatile modulation of channel conductance. To meet the increasing demand for multimodal information processing in neuromorphic systems, this study introduces a FeFET-based synaptic device that integrates both electrical and optical signal sensing functionalities. The device was fabricated using Hf0.5Zr0.5O2 (HZO) as the ferroelectric gate dielectric layer and photosensitive Sb2Se3 semiconductor as the conducting channel layer. Experimental results indicate that by modulating the parameters of electrical pulses applied to the gate electrode, the device effectively emulates various biological synaptic behaviors, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and the transition from short-term plasticity to long-term plasticity. In a handwritten digit recognition task, the device achieves a recognition accuracy of 90.2%. Regarding optical signal detection, the device demonstrates excellent photoresponse characteristics across a broad spectral range from 405-1050 nm. Furthermore, through the synergistic use of optical and electrical inputs, the device successfully implements Boolean logic "AND" operations, showcasing its ability to integrate both photoelectric information sensing and logical processing within a single platform. This study offers new material and device alternatives for the development of efficient, multimodal neuromorphic computing systems.
KE et al. (Wed,) studied this question.