Field-free control of magnetism and electronic states in ZGNR/h-BN heterojunctions via topological line defects

Key Points

• The aim is to explore how line defects in ZGNR/h-BN heterojunctions can control magnetic and electronic properties without an external field.
• Created ZGNR/h-BN heterojunctions with 558 embedded line defects.
• Varying defect position and width to study impacts on magnetism and electronic phases.
• Analyzed the resulting magnetic states and electronic properties.
• Achieved a robust antiferromagnetic to ferrimagnetic transition without an external magnetic field.
• Demonstrated programmable electronic phases, including Dirac half-metallicity, enhancing spintronic potential.

Abstract