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This research explores a method to reduce nucleation density and improve the growth of large domain nonlayered β-In2S3 nanoflakes.

April 26, 2026Frontiers of Physics0 citationsOpen Access

Suppressing nucleation and slow-kinetic epitaxial growth of large domain 2D nonlayered β-In2S3 nanoflakes via water molecules for optoelectronic devices

LHLiqi HeCentral South University LZLuwei ZouCentral South University ZLZian LiCentral South University

Key Points

This research explores a method to reduce nucleation density and improve the growth of large domain nonlayered β-In2S3 nanoflakes.
Utilized water molecules to facilitate mild oxidation of In2S3 nuclei.
Monitored growth conditions to achieve desired nanostructures from nanosheets to nanowires.
Characterized structural and electronic properties using various techniques.
Achieved a reduction in nucleation density by approximately three orders of magnitude.
Created large-area single-crystals with average sizes around 120 μm and maximum sizes of 270 μm.
Demonstrated photodetectors with a photoresponsivity of 44 A·W−1 and rapid response times of 6 ms and 7 ms.

Abstract

Nonlayered two-dimensional (2D) β-In2S3 nanostructures have demonstrated outstanding electronic and optoelectronic properties, which requires its large-scale single-crystalline films to suppress carrier scattering. However, the weak energy for In−S chemical bonds and inherent nonlayered structure with three dimensional bonds make it highly challenging to achieve large area 2D β-In2S3 nanoflakes, which is still limited by the high nucleation density and three-dimensional isotropic growth tendency. Herein, we propose a universal strategy of suppressing nucleation and slow-kinetic epitaxial growth of large domain 2D nonlayered β-In2S3 nanoflakes via water molecules for the optoelectronic applications. The water molecules acted as the function of partially oxidized In2S3 nucleus via mild oxidation, which reduced the nucleation density by approximately three orders of magnitude and enabled the formation of large-area single-crystal with an average domain size of 120 μm and a maximum size approaching 270 μm. The structural characteristics and electronic structures of our β-In2S3 samples characterized by various characterization techniques showed unique single-crystalline nature and modified Fermi level properties. Furthermore, the diverse nanostructures of β-In2S3 could be precisely tuned from triangular nanosheets to nanowires by controlling the growth conditions. The two-terminal β-In2S3 photodetectors exhibited excellent performance with a high photoresponsivity of 44 A·W−1 and a fast response speed with rise and decay times of 6 and 7 ms, respectively, revealing the superior physical properties of large domain 2D β-In2S3. This work provides a universal water-assisted strategy for synthesizing large-area 2D non-layered materials and paves the way for significant potential of high-quality large-scale single-crystalline β-In2S3 for advanced optoelectronic devices applications.

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