Engineering Strategies for 2D Layered Tin Halide Perovskite Field‐Effect Transistors

Abstract 2D hybrid perovskites have stimulated great research interest owing to their excellent optoelectronic properties. An important area of perovskite semiconductors is field‐effect transistors (FETs) that are essential components in modern electronics with a broad application range from sensors to integrated circuits. Furthermore, FETs can be exploited for the evaluation of the charge carrier transport mechanism of perovskites. This review highlights the current progress of 2D hybrid perovskite FETs and demonstrates challenges and future perspectives. A major focus is drawn on the development of 2D tin halide perovskites that show promising charge carrier mobilities in devices. Their fundamental properties, including crystal structure, thin film formation, and charge carrier transport, are presented alongside a comprehensive overview of the engineering strategies toward high‐performance FET devices. Finally, the main findings are summarized and an outlook is provided with critical assessment of the potential challenges for the further development of 2D perovskite FET devices.